Apparatus and method for generating extreme ultraviolet radiation

ABSTRACT

An apparatus for generating extreme ultraviolet (EUV) radiation includes a droplet generator configured to generate target droplets. An excitation laser is configured to heat the target droplets using excitation pulses to convert the target droplets to plasma. An energy detector is configured to measure a variation in EUV energy generated when the target droplets are converted to plasma. A feedback controller is configured to adjust parameters of the droplet generator and/or the excitation laser based on the variation in EUV energy.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a Divisional Application of U.S. patent applicationSer. No. 17/068,197, filed on Oct. 12, 2020, now U.S. Pat. No.11,269,257, which is a Divisional Application of U.S. patent applicationSer. No. 16/535,003, filed on Aug. 7, 2019, now U.S. Pat. No.10,802,406, which claims the priority of U.S. Provisional ApplicationNo. 62/719,428 filed on Aug. 17, 2018, and U.S. Provisional ApplicationNo. 62/745,267 filed on Oct. 12, 2018, the entire disclosure of each ofwhich is incorporated herein by reference.

BACKGROUND

The demand for computational power has increased exponentially. Thisincrease in computational power is met by increasing the functionaldensity, i.e., number of interconnected devices per chip, ofsemiconductor integrated circuits (ICs). With the increase in functionaldensity, the size of individual devices on the chip has decreased. Thedecrease in size of components in ICs has been met with advancements insemiconductor manufacturing techniques such as lithography.

For example, the wavelength of radiation used for lithography hasdecreased from ultraviolet to deep ultraviolet (DUV) and, more recentlyto extreme ultraviolet (EUV). Further decreases in component sizerequire further improvements in resolution of lithography which areachievable using extreme ultraviolet lithography (EUVL). EUVL employsradiation having a wavelength of about 1-100 nm.

One method for producing EUV radiation is laser-produced plasma (LPP).In an LPP based EUV source a high-power laser beam is focused on smalltin droplet targets to form highly ionized plasma that emits EUVradiation with a peak maximum emission at 13.5 nm. The intensity of theEUV radiation produced by LPP depends on the effectiveness with whichthe high-powered laser can produce the plasma from the droplet targets.Synchronizing the pulses of the high-powered laser with generation andmovement of the droplet targets can improve the efficiency of an LPPbased EUV radiation source.

BRIEF DESCRIPTION OF THE DRAWINGS

The present disclosure is best understood from the following detaileddescription when read with the accompanying figures. It is emphasizedthat, in accordance with the standard practice in the industry, variousfeatures are not drawn to scale and are used for illustration purposesonly. In fact, the dimensions of the various features may be arbitrarilyincreased or reduced for clarity of discussion.

FIG. 1 is a schematic view of an EUV lithography system with a laserproduced plasma (LPP) EUV radiation source, constructed in accordancewith some embodiments of the present disclosure.

FIG. 2A schematically illustrates the movement of target dropletrelative to the collector after being irradiated by the pre-pulse in X-Zplane.

FIGS. 2B, 2C, 2D, and 2E schematically illustrate the movement of targetdroplet by the pre-pulse in X-Y plane.

FIG. 3A schematically illustrates the various parameters to be optimizedin accordance with some embodiments of the present disclosure.

FIG. 3B illustrates the various key performance indicators (KPIs) to bere-optimized.

FIG. 4 shows a schematic of the apparatus for generating a classifiedtargeting probability map in according to some embodiments of thepresent disclosure.

FIGS. 5A, 5B, 5C, 5D and 5E show schematic diagrams of generating aclassified targeting probability map according to an embodiment of thedisclosure.

FIG. 6 illustrates a classified targeting probability map based on aform of the boolean output.

FIG. 7A illustrates a 2D suggestion map based on the key performanceindicator map with the regions of interest based on the classifierdecision.

FIG. 7B shows a schematic of the apparatus for generating 2D suggestionmap in according to some embodiments of the present disclosure.

FIG. 8A illustrates a 2D suggestion map with original and newlysuggested set points with scores for tuning parameters and performanceindicator vector data.

FIG. 8B shows a schematic of the apparatus for generating scoresaccording to some embodiments of the present disclosure

FIG. 9A shows a schematic of the apparatus for generating 2D suggestionmap with policy data in according to some embodiments of the presentdisclosure.

FIG. 9B illustrates a 2D suggestion map with scores based on policy datafor tuning parameters and performance indicator vector data.

FIG. 10A and 10B show a EUV data analyzing apparatus according to anembodiment of the present disclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus/device may be otherwise oriented (rotated 90degrees or at other orientations) and the spatially relative descriptorsused herein may likewise be interpreted accordingly. In addition, theterm “made of” may mean either “comprising” or “consisting of.”

The present disclosure is generally related to extreme ultraviolet (EUV)lithography system and methods. More particularly, it is related toapparatuses and methods for controlling an excitation laser used in alaser produced plasma (LPP) based EUV radiation source. The excitationlaser heats metal (e.g., tin) target droplets in the LPP chamber toionize the droplets to a plasma which emits EUV radiation. For optimumheating of the target droplets, the target droplets have to arrive atthe focal point of the excitation laser at the same time as anexcitation pulse from the excitation laser. Thus, synchronizationbetween the target droplets and trigger time for triggering anexcitation pulse from the excitation laser contributes to efficiency andstability of the LPP EUV radiation source. One of the objectives of thepresent disclosure is directed to controlling the excitation laser toprovide optimum heating of target droplets.

FIG. 1 is a schematic view of an EUV lithography system with a laserproduction plasma (LPP) based EUV radiation source, constructed inaccordance with some embodiments of the present disclosure. The EUVlithography system includes an EUV radiation source 100 to generate EUVradiation, an exposure tool 200, such as a scanner, and an excitationlaser source 300. As shown in FIG. 1, in some embodiments, the EUVradiation source 100 and the exposure tool 200 are installed on a mainfloor MF of a clean room, while the excitation laser source 300 isinstalled in a base floor BF located under the main floor. Each of theEUV radiation source 100 and the exposure tool 200 are placed overpedestal plates PP1 and PP2 via dampers DMP1 and DMP2, respectively. TheEUV radiation source 100 and the exposure tool 200 are coupled to eachother by a coupling mechanism, which may include a focusing unit.

The lithography system is an extreme ultraviolet (EUV) lithographysystem designed to expose a resist layer by EUV light (alsointerchangeably referred to herein as EUV radiation). The resist layeris a material sensitive to the EUV light. The EUV lithography systememploys the EUV radiation source 100 to generate EUV light, such as EUVlight having a wavelength ranging between about 1 nm and about 100 nm.In one particular example, the EUV radiation source 100 generates an EUVlight with a wavelength centered at about 13.5 nm. In the presentembodiment, the EUV radiation source 100 utilizes a mechanism oflaser-produced plasma (LPP) to generate the EUV radiation.

The exposure tool 200 includes various reflective optical components,such as convex/concave/flat mirrors, a mask holding mechanism includinga mask stage, and wafer holding mechanism. The EUV radiation generatedby the EUV radiation source 100 is guided by the reflective opticalcomponents onto a mask secured on the mask stage. In some embodiments,the mask stage includes an electrostatic chuck (e-chuck) to secure themask. Because gas molecules absorb EUV light, the lithography system forthe EUV lithography patterning is maintained in a vacuum or a-lowpressure environment to avoid EUV intensity loss.

In the present disclosure, the terms mask, photomask, and reticle areused interchangeably. In the present embodiment, the mask is areflective mask. In an embodiment, the mask includes a substrate with asuitable material, such as a low thermal expansion material or fusedquartz. In various examples, the material includes TiO₂ doped SiO₂, orother suitable materials with low thermal expansion. The mask includesmultiple reflective layers (ML) deposited on the substrate. The MLincludes a plurality of film pairs, such as molybdenum-silicon (Mo/Si)film pairs (e.g., a layer of molybdenum above or below a layer ofsilicon in each film pair). Alternatively, the ML may includemolybdenum-beryllium (Mo/Be) film pairs, or other suitable materialsthat are configurable to highly reflect the EUV light. The mask mayfurther include a capping layer, such as ruthenium (Ru), disposed on theML for protection. The mask further includes an absorption layer, suchas a tantalum boron nitride (TaBN) layer, deposited over the ML. Theabsorption layer is patterned to define a layer of an integrated circuit(IC). Alternatively, another reflective layer may be deposited over theML and is patterned to define a layer of an integrated circuit, therebyforming an EUV phase shift mask.

The exposure tool 200 includes a projection optics module for imagingthe pattern of the mask on to a semiconductor substrate with a resistcoated thereon secured on a substrate stage of the exposure tool 200.The projection optics module generally includes reflective optics. TheEUV radiation (EUV light) directed from the mask, carrying the image ofthe pattern defined on the mask, is collected by the projection opticsmodule, thereby forming an image on the resist.

In various embodiments of the present disclosure, the semiconductorsubstrate is a semiconductor wafer, such as a silicon wafer or othertype of wafer to be patterned. The semiconductor substrate is coatedwith a resist layer sensitive to the EUV light in presently disclosedembodiments. Various components including those described above areintegrated together and are operable to perform lithography exposingprocesses.

The lithography system may further include other modules or beintegrated with (or be coupled with) other modules.

As shown in FIG. 1, the EUV radiation source 100 includes a targetdroplet generator 115 and a LPP collector 110, enclosed by a chamber105. The target droplet generator 115 generates a plurality of targetdroplets DP, which are supplied into the chamber 105 through a nozzle117. In some embodiments, the target droplets DP are tin (Sn), lithium(Li), or an alloy of Sn and Li. In some embodiments, the target dropletsDP each have a diameter in a range from about 10 microns (μm) to about100 μm. For example, in an embodiment, the target droplets DP are tindroplets, each having a diameter of about 10 μm, about 25 μm, about 50μm, or any diameter between these values. In some embodiments, thetarget droplets DP are supplied through the nozzle 117 at a rate in arange from about 50 droplets per second (i.e., an ejection-frequency ofabout 50 Hz) to about 50,000 droplets per second (i.e., anejection-frequency of about 50 kHz). For example, in an embodiment,target droplets DP are supplied at an ejection-frequency of about 50 Hz,about 100 Hz, about 500 Hz, about 1 kHz, about 10 kHz, about 25 kHz,about 50 kHz, or any ejection-frequency between these frequencies. Thetarget droplets DP are ejected through the nozzle 117 and into a zone ofexcitation ZE at a speed in a range from about 10 meters per second(m/s) to about 100 m/s in various embodiments. For example, in anembodiment, the target droplets DP have a speed of about 10 m/s, about25 m/s, about 50 m/s, about 75 m/s, about 100 m/s, or at any speedbetween these speeds.

The excitation laser LR2 generated by the excitation laser source 300 isa pulse laser. The laser pulses LR2 are generated by the excitationlaser source 300. The excitation laser source 300 may include a lasergenerator 310, laser guide optics 320 and a focusing apparatus 330. Insome embodiments, the laser source 310 includes a carbon dioxide (CO₂)or a neodymium-doped yttrium aluminum garnet (Nd:YAG) laser source witha wavelength in the infrared region of the electromagnetic spectrum. Forexample, the laser source 310 has a wavelength of 9.4 μm or 10.6 μm, inan embodiment. The laser light LR1 generated by the laser generator 300is guided by the laser guide optics 320 and focused into the excitationlaser LR2 by the focusing apparatus 330, and then introduced into theEUV radiation source 100.

In some embodiments, the excitation laser LR2 includes a pre-heat laserand a main laser. In such embodiments, the pre-heat laser pulse(interchangeably referred to herein as “pre-pulse”) is used to heat (orpre-heat) a given target droplet to create a low-density target plumewith multiple smaller droplets, which is subsequently heated (orreheated) by a pulse from the main laser, generating increased emissionof EUV.

In various embodiments, the pre-heat laser pulses have a spot size about100 μm or less, and the main laser pulses have a spot size in a range ofabout 150 μm to about 300 μm. In some embodiments, the pre-heat laserand the main laser pulses have a pulse-duration in the range from about10 ns to about 50 ns, and a pulse-frequency in the range from about 1kHz to about 100 kHz. In various embodiments, the pre-heat laser and themain laser have an average power in the range from about 1 kilowatt (kW)to about 50 kW. The pulse-frequency of the excitation laser LR2 ismatched with the ejection-frequency of the target droplet DP in anembodiment.

The laser light LR2 is directed through windows (or lenses) into thezone of excitation ZE. The windows adopt a suitable materialsubstantially transparent to the laser beams. The generation of thelaser pulses is synchronized with the ejection of the target droplets DPthrough the nozzle 117. As the target droplets move through theexcitation zone, the pre-pulses heat the target droplets and transformthem into low-density target plumes. A delay between the pre-pulse andthe main pulse is controlled to allow the target plume to form and toexpand to an optimal size and geometry. In various embodiments, thepre-pulse and the main pulse have the same pulse-duration and peakpower. When the main pulse heats the target plume, a high-temperatureplasma is generated. The plasma emits EUV radiation EUV, which iscollected by the collector mirror 110. The collector 110 furtherreflects and focuses the EUV radiation for the lithography exposingprocesses performed through the exposure tool 200.

The position of the zone of excitation ZE and parameters such as laserpower, main pulse to pre-pulse delay, position of the pre-pulse focus,etc. Are determined at the time the radiation source 100 is set up. Theactual position of the zone of excitation ZE and parameters such aspower and timing are then adjusted during wafer exposure using afeedback mechanism in various embodiments. However, these parameterschange over time because of factors such as, for example, laser drift,instability in the droplet generator, and changes in chamberenvironment.

FIG. 2A schematically illustrates the movement of target droplet DPrelative to the collector 110 after being irradiated by the pre-pulsePP. A target droplet DP is sequentially irradiated by the pre-pulse PPand the main pulse MP. When the target droplet DP travels along X-axisin a direction “A” from the droplet generator DG to the zone ofexcitation ZE, the pre-pulse PP exposing the target droplet DP causesthe target droplet DP to change its shape into, for example, a pancakeand introduce a Z-axis component to its direction of travel in the X-Zplane.

The laser-produced plasma (LPP) generated by irradiating the targetdroplet DP with the laser beams PP, MP presents certain timing andcontrol problems. The laser beams PP, MP must be timed so as tointersect the target droplet DP when it passes through the targetedpoint. The laser beams PP, MP must be focused on each of their focuspositions, respectively, where the target droplet DP will pass. Theposition of the zone of excitation ZE and parameters such as, forexample, laser power, time delay between the main pulse and thepre-pulse, focal point of the pre-pulse and/or main pulse, may bedetermined when an EUV radiation source 100 is set up. The actualposition of the zone of excitation ZE and the afore-mentioned parametersare then adjusted during wafer exposure using a feedback mechanism invarious embodiments. However, these parameters can change over time dueto various factors such as, for example, mechanical and/or electricaldrift in the radiation source, instability of the droplet generator, andchanges in chamber environment.

FIG. 2B illustrates an exemplary optical metrology for misalignment inthe x-axis OMX. OMX is defined by a distance in the x-axis between adroplet and the focal point of the pre-pulse PP. Similarly, FIG. 2Cillustrates an exemplary optical metrology for misalignment in they-axis OMY. OMY is defined by a distance in the y-axis between thedroplet and the focal point of the pre-pulse PP. FIG. 2D furtherillustrates an exemplary optical metrology for misalignment in thez-axis OMZ. Similar to OMX and OMY, OMZ is defined by a distance in thez-axis between a droplet and the focal point of the pre-pulse PP. FIG.2E illustrates an exemplary optical metrology for misalignment in radiusOMR. The x-axis is in the direction of motion by the droplet from thedroplet generator 115. The z-axis is along the optical axis A1 of thecollector mirror 110. The y-axis is perpendicular to the x-axis and thez-axis.

In some embodiments, as shown in FIG. 3A, a coarse droplet steeringcamera (CDSC), a fine droplet steering camera (FDSC), and a dropletdetection module (DDM) are provided to monitor the position of thedroplet and adjust the triggering parameters of the pre-pulse PP andmain pulse MP. In some embodiments, the DDM uses one or more low powerlasers to track the velocity of the droplet DP. T-fire and MPPP delayare two exemplary timing parameters for the laser beams PP, MP. In someembodiments, tuning parameters 1002 include tuning related parameterssuch as for example OMY, OMZ, T-fire, and PPAOM2. T-fire is defined as atime between when the droplet DP is detected by the DDM and when thepre-pulse PP is fired. Similarly, MPPP delay is defined by a timebetween when main pulse MP is fired and when the pre-pulse PP is fired.As also shown in FIGS. 2C and 2D, OMY and OMZ are also defined bydistances in the y-axis and the z-axis, respectively, between thedroplet and the focal point of the pre-pulse PP. PPAOM2 is defined by apercentage of the pre-pulse energy to pass through a secondacousto-optic modulator (AOM2).

In some embodiments as shown in FIG. 3B, the key performance indicators1004 includes performance related parameters, such as, for example EUVenergy 1011, DG-Y 1012, Dose error 1013, SOB 1014, Fast dropout 1015,and X-int 1016. EUV energy 1011 is defined by an energy intensityemitted by the EUV source. DG-Y 1012 is defined by an offset distance inthe y-axis of the droplet position. Dose error 1013 is defined as thepercent difference between applied and the expected dose. The Start ofBurst effect 1014 is an unstable EUV energy generated at the beginningof target droplet bursting. Fast dropout 1015 is an unstable EUV energycausing the droplet to undergo insufficient expansion before it is hitby the main pulse.

FIG. 4 illustrates a block diagram of non-limiting examples of theoptimization system 1000 in accordance with one or more embodimentsdescribed herein.

In some embodiments, as shown in FIGS. 4 and 5A, the optimization system1000 receives raw performance data 1006. The raw performance data 1006includes key performance indicators (KPIs) 1004, such as Dose Error1013, and tuning parameters 1002, such as OMX, OMY, OMZ and OMR, as alsodescribed in FIGS. 3A-3B.

Referring to FIGS. 4 and 5B, the raw performance data 1006 can beemployed by a key performance indicator map 1102 to derive keyperformance indicator vector data 1104. The key performance indicatormap 1102 illustrates key performance indicators 1004 of interest withrespect to a set of attributes among the tuning parameters 1002 derivedfrom the raw performance data 1006. For example, in one embodiment asshown in FIG. 5B, an EUV Energy chosen as the key performance indicatoris mapped to the set of attributes, OMZ in z-axis and T-fire in y-axis.A region of interest, sub-image data 1112, can be extracted from the keyperformance indicator map 1102. The sub-image data 1112 includes a firstsubset 1820 of the raw performance data 1006 that represents an originalset point 1822 for the EUV Energy chosen as the key performanceindicator.

FIG. 5C illustrates examples of the key performance indicator map 1102for performance related parameters, such as for example, EUV energy,DG-Y, Dose error, SOB, Fast dropout, and X-int. Each of theaforementioned examples corresponds to OMY and OMZ that are generatedfrom the raw performance data 1006 by the optimization system 1000.

Referring to FIGS. 4 and 5D, in some embodiments, the sub-image data1112 is provided to a classifier 1202. The classifier 1202 may reviewany combination of particular performance indicators for review. Thereflectivity of the collector is one important key performance indicatorfor EUV. For example, in some embodiments as shown in FIG. 5D, the keyperformance indicator vector data 1104 can be classified as twocategories, good and bad, by using historical data of the reflectivity(%) of the collector. In a particular embodiment, the classifier 1202 isdefined as a degradation rate (%) 1206. It is observed that when thereflectivity (R %) is stable, the EUV source is at its maximumperformance and maintains a stable condition 1208. In contrast, when thereflectivity (R %) shows a trend of fast decay, the EUV corresponds to adecaying performance 1209 and is in a unstable condition.

As shown in FIGS. 4 and FIG. 5E, the key performance indicator vectordata 1104 is classified in two categories, good and bad. The classifier1202 generates a classifier decision 1204 based on the input regardingthe reflectivity of the collector as shown in FIG. 5D. For example, ifit is determined that the degradation rate of the reflectivity (%) ispositive, then classifier decision indicating “good” is generated. If itis determined that the degradation rate (%) is negative, then aclassifier decision indicating “bad” is generated. Such classifierdecisions based on the analysis of the associated degradation rate (%)can be recorded in the form of Boolean output (e.g., true/false or 1/0)or another suitable format. The classifier decision 1204 may be combinedwith a time input (e.g., the time duration of which the degradation rateis positive or positive) to generate classified data 1212. Theclassified data 1212 can be separated based on the time duration thatshows the degradation rate being positive and negative.

As shown in FIG. 6, the statistical learning component 1110 generates atargeting probability map 1302 based on the form of a boolean output1303 (e.g., 1 or 0). The targeting probability map 1302 is configured toidentify a second subset 1840 of the tuning parameters 1002 with ahighest point accumulated by the boolean output as a newly suggested setpoint within the sub-image data for the chosen key performance indicatorof interest. In some embodiments, the second subset 1840 of the tuningparameters 1002 may be chosen based on the density of the targetingprobability map 1302.

FIG. 7A illustrates an exemplary 2D suggestion map 1304 based on the keyperformance indicator map 1102 combined with the classified data 1212showing the regions of interest (ROI) 1218 based on the classifierdecision 1204.

In some embodiments, as shown in FIG. 7B, statistical learning component1110 may further utilize classification algorithms to generate 2Dsuggestion maps 1508 ₁-1508 _(N). The 2D suggestion maps 1508 ₁-5108_(N) differ from one another based on the differences betweencorresponding classification algorithms 1504 ₁-1504 _(N). Classificationalgorithms 1504 can represent one or more algorithms used by acorresponding 2D suggestion map 1508 ₁-1508 _(N). In other words, themachine learning component 1502 generates a set of 2D suggestion maps1508 ₁-1508 _(N) that differ based on the respective classificationalgorithms 1504 ₁-1504 _(N) that are trained by training data 1506according to a machine-learning technique.

In some embodiments, as shown in FIGS. 8A and 8B, the statisticallearning component 1110 generates the 2D suggestion map 1304 based onthe form of particular scores 1305 (e.g., 25, 50, 75, 99.5). Inparticular embodiments, as shown in FIG. 8A, the statistical learningcomponent 1110 identifies a first subset 1820 of the tuning parametersas an original set point 1822 based on the performance indicator vectordata, EUV energy at 2.05 mJ. The 2D suggestion map 1304 is configured toidentify a second subset 1842 of the tuning parameters 1002 with ahighest point accumulated by the particular scores 1305 as a newlysuggested set point for the chosen key performance indicator ofinterest. For example, as shown in FIG. 8A of this disclosure, thesecond subset 1840 of the key performance indicator vector data 1104that have been chosen to indicate a newly suggested set point 1842, EUVenergy of 2.31 mJ, by the statistical learning component 1110 disclosedherein.

In some embodiments, as shown in FIG. 8B, the statistical learningcomponent 1110 utilizes a scoring function 1602 to generate scores 1604₁-1604 _(N). For example, in some embodiments, the scores 1604 aredetermined based on the degradation rate regarding the reflectivity (R%) of the collector including positives, 0, and negatives. In someembodiments, the identification of negatives is assigned the value 25 ofthe scoring function, identification of 0 is assigned the value 50, andidentification of positives is assigned higher values of 75 or 99.5 ofthe scoring function.

Referring to FIGS. 4, 9A and 9B, the statistical learning component 1110can further include a policy 1308 that can generate policy data 1310.The policy data 1310 represents a weighting policy associated with the2D suggestion maps 1508. In some embodiments, this weighting policy canbe indicative of a weighting of importance. For example, the policy data1310 is generated in response to input to a slider mechanism that ismanipulated and/or modified to a value (or color, preference, etc.), asshown in FIG. 9B, between values on two opposing sides (or preferences),one corresponding to decreasing positives and one corresponding toincreasing positives.

Similar to FIG. 7B, the 2D suggestion maps 1508 ₁-5108 _(N) differ fromone another based on the differences between correspondingclassification algorithms 1504 ₁-1504 _(N) including the policy data1310 generated by the policy 1308. Classification algorithms 1504 canrepresent one or more algorithms used by a corresponding 2D suggestionmap 1508 ₁-1508 _(N). In other words, the machine learning component1502 generates a set of 2D suggestion maps 1508 ₁-1508 _(N) that differbased on respective classification algorithms 1504 ₁-1504 _(N) includingthe policy data 1310 that are trained by training data 1506 according toa machine-learning technique.

Thus, targeting parameters may be re-optimized in-line without stoppingthe EUV system in order to maintain a stable EUV energy. FIGS. 5A-9Bschematically illustrate the various parameters that are optimizedin-line in various embodiments.

In various embodiments, the re-optimization is performed periodically,for example, every minute, every 5 minutes, every 10 minutes, every 30minutes, etc. depending on, for example, how much variation in EUVradiation occurs. For example, if a variation in the EUV energy over acertain period of time is less than a threshold value (e.g., 1%, 5% or10%), none of the parameters are optimized. However, if the variation inEUV energy over that period of time is more than the threshold value,one or more of the parameters is optimized. In various embodiments, thedetermination of which parameter is to be optimized is based onhistorical data relating to the variation in EUV energy as a function ofvariation in various parameters.

FIGS. 10A and 10B show a EUV data analyzing apparatus according to anembodiment of the present disclosure. FIG. 10A is a schematic view of acomputer system that executes the in-line optimization process describedabove. The foregoing embodiments may be realized using computer hardwareand computer programs executed thereon. In FIG. 10A, a computer system900 is provided with a computer 901 including an optical disk read onlymemory (e.g., CD-ROM or DVD-ROM) drive 905 and a magnetic disk drive906, a keyboard 902, a mouse 903, and a monitor 904.

FIG. 10B is a diagram showing an internal configuration of the computersystem 900. In FIG. 10B, the computer 901 is provided with, in additionto the optical disk drive 905 and the magnetic disk drive 906, one ormore processors 911, such as a micro processing unit (MPU), a ROM 912 inwhich a program such as a boot up program is stored, a random accessmemory (RAM) 913 that is connected to the MPU 911 and in which a commandof an application program is temporarily stored and a temporary storagearea is provided, a hard disk 914 in which an application program, asystem program, and data are stored, and a bus 915 that connects the MPU911, the ROM 912, and the like. Note that the computer 901 may include anetwork card (not shown) for providing a connection to a LAN.

The program for causing the computer system 900 to execute the functionsof the EUV data analyzing apparatus in the foregoing embodiments may bestored in an optical disk 921 or a magnetic disk 922, which are insertedinto the optical disk drive 905 or the magnetic disk drive 906, and betransmitted to the hard disk 914. Alternatively, the program may betransmitted via a network (not shown) to the computer 901 and stored inthe hard disk 914. At the time of execution, the program is loaded intothe RAM 913. The program may be loaded from the optical disk 921 or themagnetic disk 922, or directly from a network.

The program does not necessarily have to include, for example, anoperating system (OS) or a third party program to cause the computer 901to execute the functions of the EUV data analyzing apparatus in theforegoing embodiments. The program may only include a command portion tocall an appropriate function (module) in a controlled mode and obtaindesired results.

In the programs, the functions realized by the programs do not includefunctions that can be realized only by hardware in some embodiments. Forexample, functions that can be realized only by hardware, such as anetwork interface, in an acquiring unit that acquires information or anoutput unit that outputs information are not included in the functionsrealized by the above-described programs. Furthermore, a computer thatexecutes the programs may be a single computer or may be multiplecomputers.

Further, the entirety of or a part of the programs to realize thefunctions of the in-line optimization apparatus is a part of anotherprogram used for EUV parameter optimization processes in someembodiments. In addition, the entirety of or a part of the programs torealize the functions of the in-line optimization apparatus is realizedby a ROM made of, for example, a semiconductor device in someembodiments.

The in-line optimization disclosed herein provides a more stable plasmageneration and thereby more stable EUV radiation. The stable plasmageneration prevents excessive contamination of the collector mirror andother parts of the chamber as illustrated in FIGS. 5A-9B. Moreover, thestable EUV radiation reduced dose error during lithography, therebyimproving the patterns formed using the EUV radiation and the throughputof the lithography system. The stable EUV radiation emitted from theplasma according to the present disclosure is subsequently used to formpatterns in a photoresist coated on a substrate. The patterns correspondto semiconductor device features to be formed in the substrate. Inmanufacturing steps, a photoresist is deposited on the substrate. Thephotoresist coated substrate is selectively exposed to the stable EUVradiation to form a latent pattern in the photoresist. The latentpattern is developed using a suitable developer to form a pattern in thephotoresist. The pattern in the photoresist is then transferred to thesubstrate through an etching process. The in-line optimization disclosedherein, therefore, improves the accuracy of transferring the patternonto the substrate.

An embodiment of the disclosure is an apparatus for generating extremeultraviolet (EUV) radiation that includes a droplet generator, anexcitation laser, an energy detector, and a feedback controller. Thedroplet generator is configured to generate target droplets. Theexcitation laser is configured to heat the target droplets usingexcitation pulses to convert the target droplets to plasma. The energydetector is configured to measure a variation in EUV energy generatedwhen the target droplets are converted to plasma. The feedbackcontroller is configured to adjust a parameter of at least one of thedroplet generator or the excitation laser based on the variation in EUVenergy. In some embodiments, the parameter of the droplet generator isat least one selected from the group consisting of droplet size, droplettemperature, time delay between successive droplets, and dropletvelocity. In some embodiments, the parameter of the excitation laser isat least one selected from the group consisting of position of focus ofa pre-pulse, position of focus of a main pulse, time delay between thepre-pulse and the main pulse, laser power, time delay between successivepre-pulses, time delay between successive main pulses, and laser pulsewidth. In some embodiments, the feedback controller is furtherconfigured to determine another parameter to be adjusted based onhistorical data relating to the variation in EUV energy as a function ofa variation in the parameter. In some embodiments, the feedbackcontroller is further configured to determine the parameter to beadjusted based on a targeting probability map including classified datasets of raw performance data by applying a classifying rule to the rawperformance data. In some embodiments, the feedback controller isfurther configured to determine the parameter to be adjusted based on a2D suggestion map based on a performance indicator map combined withclassified data associated with the 2D suggestion map.

Another embodiment of the disclosure is a method of adjusting parametersof the droplet generator and the excitation laser based on the variationin EUV radiation. The method includes receiving raw performance dataincluding performance indicators and tuning parameters. Subsequently, aperformance indicator map is generated that includes performanceindicator vector data corresponding to attributes of tuning parameters.Sub-image data is generated that includes a first subset of the rawperformance data. The method also includes generating classified datasets of the raw performance data by applying a classifying rule to thesub-image data. Subsequently, a targeting probability map is generatedthat is based on the classified data sets. A second subset of the rawperformance data is generated that is based on the targeting probabilitymap. In response to a variation in performance data, a configurableparameter of the tuning parameters associated with the performanceindicators is automatically adjusted to set the variation in performancedata within a targeted range. In some embodiments, raw performance dataincludes performance indicators selected from the group consisting ofEUV energy, DG-Y, Dose error, SOB, Fast dropout, and X-int. In someembodiments, raw performance data also includes tuning parametersselected from the group consisting of OMY, OMZ, T-fire, and PPAOM2. Insome embodiments, a sub-image includes a region of interest. In someembodiments, classified data sets are received that include aclassifying rule based on a degradation rate of a reflectivity of acollector. In some embodiments, a targeting probability map is based ona boolean output. In some embodiments, the determining a second subsetof the raw performance data is based on a density of the targetingprobability map. In some embodiments, the method further includesgenerating a 2D suggestion map based on the performance indicator mapcombined with the classified data. In some embodiments, the methodfurther includes generating a 2D suggestion map based on the performanceindicator map combined with the classified data and a policy associatedwith the 2D suggestion map.

Another embodiment of the disclosure is system that includes a memory, aprocessor, a performance indicator map, and a statistical learningcomponent. The memory stores computer executable components. Theprocessor executes computer executable components stored in the memory.The performance indicator map generates performance indicator vectordata corresponding to attributes of tuning parameters. The statisticallearning component receives sub-image data corresponding to a firstsubset of the tuning parameters. The statistical learning component alsogenerates classified data sets by applying a classifying rule to thesub-image data. The statistical learning component determines a secondsubset of the tuning parameters based on the targeting probability map.In response to a variation in performance data, the statistical learningcomponent automatically adjusts the tuning parameters associate with theperformance indicators to set the variation in performance data within atargeted range. In some embodiments, the system further includesgenerating a 2D suggestion map based on the performance indicator mapcombined with the classified data. In some embodiments, the systemfurther includes generating a 2D suggestion map based on the performanceindicator map combined with the classified data and a policy associatedwith the 2D suggestion map. In some embodiments, the classified datasets includes a classifying rule based on a degradation rate of areflectivity of a collector. In some embodiments, the system furtherinclude classification algorithms and training data.

It will be understood that not all advantages have been necessarilydiscussed herein, no particular advantage is required for allembodiments or examples, and other embodiments or examples may offerdifferent advantages.

The foregoing outlines features of several embodiments or examples sothat those skilled in the art may better understand the aspects of thepresent disclosure. Those skilled in the art should appreciate that theymay readily use the present disclosure as a basis for designing ormodifying other processes and structures for carrying out the samepurposes and/or achieving the same advantages of the embodiments orexamples introduced herein. Those skilled in the art should also realizethat such equivalent constructions do not depart from the spirit andscope of the present disclosure, and that they may make various changes,substitutions, and alterations herein without departing from the spiritand scope of the present disclosure.

1. An apparatus for generating extreme ultraviolet (EUV) radiation, theapparatus comprising: a memory storing computer executable components;and a processor configured to execute the computer executable componentsstored in the memory, wherein: the computer executable components, whenexecuted by the processor, cause the processor to: obtain rawperformance data including corresponding performance indicators andtuning parameters of the raw performance data; obtain a first subset anda second subset of the raw performance data including reflectivity of anEUV collector and tuning parameters corresponding to the reflectivity ofthe EUV collector; generate a performance indicator map includingreflectivity of the EUV collector based on the tuning parameterscorresponding to the reflectivity of the EUV collector; classify thefirst and second subsets of the raw performance data by using historicalreflectivity data of the reflectivity of the EUV collector; determinewhether a degradation rate between the first subset of the rawperformance data and between the second subset of the raw performancedata is within a target range; in response to a determination that thedegradation rate between the first subset of the raw performance dataand between the second subset of raw performance data is outside thetarget range, automatically adjust a tuning parameter associated withthe reflectivity of the EUV collector to set the degradation rate withinthe target range; and determine a decaying performance of the EUVcollector based on the tuning parameters associated with thereflectivity of the EUV collector.
 2. The apparatus of claim 1, whereinthe raw performance data includes performance indicators selected fromthe group consisting of EUV energy, DG-Y, and Dose error.
 3. Theapparatus of claim 1, wherein the raw performance data includes tuningparameters selected from the group consisting of OMY, OMZ, T-fire, andPPAOM2.
 4. The apparatus of claim 1, wherein the executed computerexecutable components further cause the processor to generate asub-image including a region of interest.
 5. The apparatus of claim 1,wherein the executed computer executable components further cause theprocessor to generate classified data sets including a classifying rulebased on the degradation rate of the reflectivity.
 6. The apparatus ofclaim 1, wherein the executed computer executable components furthercause the processor to generate a targeting probability map based on aboolean output.
 7. The apparatus of claim 6, wherein the executedcomputer executable components further cause the processor to determinea second subset of the raw performance data based on a density of thetargeting probability map.
 8. The apparatus of claim 1, wherein theexecuted computer executable components further cause the processor togenerate a 2D suggestion map based on the performance indicator mapcombined with the classified data.
 9. The apparatus of claim 1, whereinthe executed computer executable components further cause the processorto generate a 2D suggestion map based on the performance indicator mapcombined with the classified data and a policy associated with the 2Dsuggestion map.
 10. An apparatus for generating extreme ultraviolet(EUV) radiation, the apparatus comprising: a non-transitory memorystoring computer executable components; a processor, wherein theexecuted computer executable components, when executed by the processor,cause the processor to: obtain raw performance data includingperformance indicators and tuning parameters, and programmed to: obtaina first subset and a second subset of raw performance data includingreflectivity of an EUV collector and tuning parameters; generate aperformance indicator map including reflectivity data corresponding toattributes of tuning parameters; classify data sets of the rawperformance data by using historical reflectivity data of the EUVcollector; determine whether a degradation rate between first subset anda second subset of raw performance data is within a targeted range; inresponse to a determination that the degradation rate between the firstsubset and the second subset of raw performance data is outside of thetargeted range, automatically adjust one or more of the tuningparameters associated with the reflectivity of the EUV collector to setthe degradation rate within the targeted range; and determine a decayingperformance of the EUV collector based on the one or more of the tuningparameters associated with the reflectivity of the EUV collector. 11.The apparatus of claim 10, wherein the raw performance data includesperformance indicators of EUV energy error.
 12. The apparatus of claim10, wherein the raw performance data includes performance indicators ofDG-Y error.
 13. The apparatus of claim 10, wherein the raw performancedata includes performance indicators of Dose error.
 14. The apparatus ofclaim 10, wherein the raw performance data includes tuning parameters ofOMY.
 15. The apparatus of claim 10, wherein the raw performance dataincludes tuning parameters of OMZ.
 16. The apparatus of claim 10,wherein the raw performance data includes tuning parameters of T-fire.17. The apparatus of claim 10, wherein the raw performance data includestuning parameters of PPAOM2.
 18. An apparatus for generating extremeultraviolet (EUV) radiation, comprising: a non-transitory memory storinga program; a processor, wherein the program, when executed by theprocessor, causes the processor to: obtain raw performance dataincluding performance indicators and tuning parameters associated with akey performance indicator; obtain a first subset of the raw performancedata and a second subset of the raw performance data including the keyperformance indicator and the tuning parameters; generate a performanceindicator map including the key performance indicator; classify thefirst subset of the raw performance data and the second subset of theraw performance data; determine whether a degradation rate of the keyperformance indicator between the first subset of the raw performancedata and between the second subset of the raw performance data is withina target range; and in response to a determination that the degradationrate of the key performance indicator between the first subset of rawperformance data and the degradation rate of the key performanceindicator between the second subset of raw performance data is outsidethe target range, automatically adjust the key performance indicator bythe tuning parameters to keep the degradation rate of the keyperformance indicator between the first subset of raw performance dataand the degradation rate of the key performance indicator between thesecond subset of raw performance data within the target range.
 19. Theapparatus of claim 18, wherein the executed program further causes theprocessor to: generate a sub-image includes a region of interest,classified data sets including a classifying rule based on thedegradation rate of the reflectivity, or generate a targetingprobability map based on a boolean output.
 20. The apparatus of claim18, wherein the executed program further causes the processor to: a 2Dsuggestion map based on the performance indicator map combined with theclassified data, or a 2D suggestion map based on the performanceindicator map combined with the classified data and a policy associatedwith the 2D suggestion map.